张楷亮简介
姓名
张楷亮
性别
出生年月
1977年10月
学历学位
研究生 博士
职 称 教授
所属学院
电子信息工程学院 是否博硕导 博导硕导
联系电话 022-60214229
E_mail
kailiang_zhang@163.com
所属学科 080300 光学工程
080900 电子科学与技术
研究方向
0805材料科学与工程(01新型光电材料与器件物理) 新型2D电子材料及器件
人才称号
天津市高等学校特聘教授 ;教育部新世纪优秀人才支持计划人选 ;天津市“131”创新型人才培养工程第一层次人选 ;
学术兼职
天津市薄膜电子与通信器件重点实验室主任
讲授课程
超大规模集成电路工艺技术、集成电路工艺原理
主要科研项目及代表性成果(包括鉴定项目、论文、专著、获奖、专利等):
  

项目:

1.项目负责人,国家自然科学基金,碳纳米管电极交叉阵列阻变存储单元构建及开关特性研究(61274113),2013.01~2016.12,82万;

2.项目负责人,国家自然科学基金,极大规模集成电路碳纳米管互连基础及关键工艺研究(60806030),2009.1-2011.12,23万元;

3.项目负责人,天津市科技计划重点项目,定向碳纳米管电路垂直互连集成技术研究(10SYSYJC27700),2010.4-2013.3,50万元;

4.项目负责人,教育部新世纪优秀人才支持计划,基于碳纳米管交叉电极阵列-叠层阻变存储器件关键技术研究,项目编号:NCET-11-1064,2012~2014,50万;

5.项目负责人,天津市特聘教授专项基金,微纳器件设计及集成关键技术研究,2009.8-2013.7,50万

6.项目负责人,天津市学科领军人才基金,2013.04~2016.03,60万;

7.项目负责人,天津市131第一层次人才项目基金,2013.04~2016.03,20万;

8.项目负责人,上海市纳米科技专项项目,纳米抛光液产业化关键技术及CMP工艺研究(0552nm043), 2005.12~2007.12,90万元;

9.项目负责人,上海市国际科技合作基金项目,相变存储器关键材料Ge-Sb-Te化学机械抛光的研究(AM 0414), 2005.01~2006.12,15万元

10.项目负责人,天津市自然科学基金,超高声速材料金刚石纳米膜制备及平坦化技术研究(08JCYBJC14600), 2008.4~2011.3,10万元;

11.项目负责人,天津市自然科学基金,基于氧化钒相变薄膜的RRAM构建及阻变特性研究,(13JCYBJC15700) ,2013.04~2016.03,10万;

12.项目负责人,天津市教委重点项目,低热阻金刚石薄膜LED倒装散热基板的研究(ZD200709), 2007.11~2010.10,10万元;

13.参与项目,国家863项目,纳电子器件C-RAM关键技术研究(2003AA302720), 2003.11~2005.10,200万元;

14.参与项目,国家863项目,纳米C-RAM集成器件关键技术研究(2004AA302G20),2004.6~2006.2,180万元;

15.参与项目,国家973项目,项目名称:纳米尺度硅集成电路器件与工艺基础研究,课题名称:纳米尺度硅集成电路中新材料的基础研究,(2006CB02706)2006.9~2008.8,225万;

文:

1.第一作者;Electrochemical Metallization and Trapping/Detrapping Resistive Switching Mechanism in Al/VOx/Cu RRAM,ECS Solid State Letters, 2014,3 (10) Q63-Q66(SCI)

2.第一作者;Optimization and Mechanism on Chemical Mechanical Planarization of Hafnium Oxide for RRAM Devices,ECS Journal of Solid State Science and Technology,2014,3(7):P249-P252(SCI)

3.第一作者,Exploration on chemical mechanical planarization of ZnO functional thin films for novel devices,Microelectronic Engineering, 2013, 101:37-41(SCI)

4.第一作者;Modeling of conducting bridge evolution in bipolar vanadium oxide based resistive switching memory,Chin. Phys. B,2013,22(9):097101(SCI)

5.第一作者,Crosstalk analysis of carbon nanotube bundle interconnects,Nanoscale Research Letters,2012,7(1):138(II区SCI)

6.第一作者, Synthesis and Performance of Colloidal Silica Nano-abrasives with Controllable Size for Chemical Mechanical Planarization,Journal of Nanoscience and Nanotechnology,2009,9(2):1054-1057 (II区SCI)

7.第一作者,Preparation and Characterization of Modified-Clay-Reinforced and Toughened Epoxy-Resin Nanocomposites,J. Appl. Polym. Sci.,2004,91(4):2649 ~2652(SCI)

8.第一作者,Colloidal Nano-abrasives and Slurry for Chemical-Mechanical Polishing of Semiconductor Materials,Journal of Ceramic Processing Research, 2007,8(1):52~55(SCI)

9.通讯作者;Microstructure and Nanometer Scale Piezoelectric Properties of c-BN Thin Films with Cu buffer layer by Piezoresponse Force Microscopy;IEEE Transaction on Nanotechnology,2014,13(3):442-445 (II区SCI)

10.通讯作者;Simulation Study of dimensional effect on Bipolar Resistive Random Access Memory (RRAM);International Journal of Nanotechnology,2014,11(1-4):97-105(SCI)

11.通讯作者,氧化钒薄膜的微结构及阻变特性研究,物理学报(Acta Phys. Sin.)2013,62(4 ):047201(IV区SCI:116CG,IF=1.029)

12.通讯作者;Analysis of resistive switching behaviors of vanadium oxide thin film,Chin. Phys. B,2013,22(3):037201(SCI)

13.通讯作者,Temperature tunability of photonic crystal fiber filled with Fe3O4 nanoparticle fluid,Applied Physics Letters, 2011,98, 021103(II区SCI)

14.通讯作者,Linear edge and temperature characteristic of tilted fiber Bragg gratings cladding-mode envelope,Optical Fiber Technology, 2011,17(4):286-290(SCI)

15.通讯作者,Effect of chemicals on chemical mechanical polishing of glass substrate,Chinese Physics Letter,2007,24(1):259~261(SCI)

16.通讯作者,Study on the Cleaning of silicon after CMP in ULSI, Microelectronic Engineering, 2003,66(1-4):433~437 (SCI)

17.通讯作者,Investigation on the Final Polishing Liquid and Technique of Silicon Substrate in ULSI, Microelectronic Engineering, 2003,66(1-4):438~444 (SCI)

18 .Shao Xing L.,Zhao Jin S.*,Zhang Kai L.,Two-Step Reset in the Resistance Switching of the Al/TiOx/Cu Structure,ACS APPLIED MATERIALS & INTERFACES,2013,5(21):11265-11270(I区SCI)

19 .Miao, Yinping,Zhang, Kailiang,Liu, Bo,etal,Ferrofluid-Infiltrated Microstructured Optical Fiber Long-Period Grating,IEEE Photonics Technology Letter,2013,25(3):306-309   (II区SCI)

20 .Fantao Meng,Jie Sun,Mariusz Graczyk,Kailiang Zhang, Nonlinear electrical properties of Si three-terminal junction devices,Applied Physics Letters, 2010,97, 242106(II区SCI)

21 .MiaoYinping,Wu Jixuan, Lin Wei,Zhang Kailiang,Magnetic field tunability of optical microfiber taper integrated with ferrofluid,OPTICS EXPRESS,2013,21(24):29914-29920(II区SCI)

22.Liangyong Wang, Kailiang Zhang, Zhitang.Song, Songlin Feng,Chemical mechanical polishing and a succedent reactive ion etching processing of sapphire wafer,Journal of the Electrochemical Society,2007,154(3):H166~H169 (II区SCI)

23.Liangyong Wang, Kailiang Zhang, Zhitang.Song, Songlin Feng,Ceria concentration effect on chemical mechanical polishing of optical glass,Applied Surface Science,2007,253:4951~4954(II区SCI)

24.第一作者,Effect of different electrode on resistance switching characteristics of titanium oxide for flexible memory;Optoelectronics Letters, 2013,9(4):263-265(EI:20132816484693)

25.第一作者, Effect of substrate temperature on aligned high-density carbon nanotubes deposited by RF-PECVD [J]. Optoelectronics Letters, 2011,7(2):0085~0087(EI:20111313886065)

26.第一作者,氧化钒薄膜的制备及电致开关特性的研究,光电子.激光,2011,22(5):656~659(EI:20112714112227)

27.第一作者,基于电感耦合氧等离子体金刚石膜表面修饰的功率优化,光电子.激光,2011,22(7):1034-1037(EI:20113014176377)

28.第一作者, 硅晶片双面超精密化学机械抛光,半导体学报,2006,27(增刊):396-399(EI:071110487332)

29.第一作者,王芳,ULSI硅衬底的化学机械抛光,半导体学报,2004,25(1):115~119(EI:04258227649)

30.通讯作者,Synthesis and Characterization of Nano-structure Tungsten-doped Vanadium Oxide,ECS Transactions, 2014,60 (1) 477-482 (EI:20143218017020)

31.通讯作者,Effect of Embedded Graphene on Al/VOx/Cu Resistive Switching Performance,ECS Transactions, 2014,60 (1) 545-549 (EI:20143218017031)

32.通讯作者,Exploration of Novel Slurry on Hafnium Oxide Films Chemical Mechanical Planarization,ECS Transactions, 2014,60 (1) 647-652 (EI:20143218017047)

33.通讯作者,Horizontal Growth and Electrical-Crosstalk Simulation of CNT Interconnection,ECS Transactions, 60 (1) 751-756 (EI:20143218017064)

34.通讯作者,Research on Multilevel Resistive Switching of Cu/HfO2/TiN Structure and its Switching Mechanism,ECS Transactions, 2014,60 (1) 1001-1006 (EI:20143218017103)

35.通讯作者,An Increasing High Resistance State Phenomenon in Al/VOx/Cu Resistive Switching Device,ECS Transactions, 2014,60 (1) 1057-1062 (EI:20143218017112)

36.通讯作者,Coexistence of Bipolar and Unipolar in NiO Resistance Switching,ECS Transactions, 2014,60 (1) 1063-1067 (EI:20143218017113)

37.通讯作者,Effect of Annealing Temperature and Surface Adsorption Fe-,Pd- on SnO2 Gas Sensor,ECS Transactions, 2014,60 (1) 1147-1152 (EI:20143218017126)

38.通讯作者,Gas Sensing Properties of Formaldehyde Sensor Based on Zn-, Cu-Doped NiO Thin Film,ECS Transactions, 2014,60 (1) 1115-1120 (EI:20143218017121)

39.通讯作者, Resistive switching characteristics based on Cu/VOx/Al structure,ECS Transactions, 52 (1) 467-472 (2013) (EI:20131516202767)

40.通讯作者,Investigation of Diamond Films Polished by Thermal Chemical Mechanical Polishing,ECS Transactions, 52 (1) 517-522 (2013) (EI:20131516202761)

41.通讯作者,Improvement of electronic characteristic for vertical CNT via interconnection by Focused Ion Beam,ECS Transactions, 52 (1) 641-645 (2013)(EI:20131516202766)

42.通讯作者,Electrical Properties and Conduction Mechanism of RRAM with Al/WOX/Cu Structure,ECS Transactions, 52 (1) 1003-1008 (2013) (EI:20131516202819)

43.通讯作者,Resistive Switching Characteristics of Zinc Oxide Resistive RAM Doped with Nickel,ECS Transactions, 52 (1) 1009-1014 (2013) (EI:20131516202836)

44.通讯作者,Effects of Rapid Thermal Process on the Microstructural, Electrical and Optical Properties of AZO Thin Films;Applied Mechanics and Materials,2013,441:11-14(EI 20140117158766)

45.通讯作者,Resistance Switching Characteristics of Sputtered Titanium Oxide On A Flexible Substrate,Electrochemical Society Transactions, 2012,44 (1) :87-91(EI:20134316870695)

46.通讯作者,Simulation of Electrochemical Metallization RRAM by Kinetic Monte Carlo Method,Electrochemical Society Transactions, 2012,44 (1) :93-98(EI:20134316870629)

47.通讯作者,A Physical Model of 1C1R for Bipolar ZnO Resistive Switching,Electrochemical Society Transactions, 2012,44 (1) :173-178(EI:20134316870660)

48.通讯作者,Resistive switching characteristics of VOX thin films deposited onto Cu buffer layer,Electrochemical Society Transactions, 2012,44 (1) :445-450(EI:20134316870691)

49.通讯作者,Texture and electric properties of BN films deposited on different electrodes by RF magnetron sputtering,Electrochemical Society Transactions, 2012,44 (1) :493-497(EI:20134316870684)

50.通讯作者,Optimization of Slurry and Technological Parameter on Chemical Mechanical Polishing of Titanium Dioxide Film for IC,Electrochemical Society Transactions, 2012,44 (1) :519-524(EI:20134316870653)

51.通讯作者,Analysis of Crosstalk in Multi-wall Carbon Nanotube Interconnection ,Electrochemical Society Transactions, 2012,44 (1) :785-790(EI:20134316870630)

52.通讯作者,Research of bilayer stacked resistance switching memory structure based on Pt/NiO/TiO2/Pt,Electrochemical Society Transactions, 2012,44 (1) :1221-1226(EI:20134316870655)

53.通讯作者,Hydrogenated Microcrystalling Silicon Single-Junction NIP Solar Cells,Electrochemical Society Transactions, 2012,44 (1) :1263-1268(EI:20134316870707)

54.通讯作者,Influence of substrate temperature on properties of indium tin oxide thin films prepared by DC magnetron sputtering,Electrochemical Society Transactions, 2012,44 (1) :1311-1316(EI:20134316870708)

55.通讯作者, Effect of RF Power on Carbon Nanotubes Synthesized at Low Temperature by RF PECVD, Electrochemical Society Transactions,2011,34(1):793~797(EI:20112614108487)

56.通讯作者, Effect of film thickness on resistance switching characteristics for Cu/NiO/Pt structure, Electrochemical Society Transactions,2011,34(1):541~546(EI:20112614108446)

57.通讯作者, Effect of pH on CMP of VOx Thin Films for RRAM, Electrochemical Society Transactions,2011,34(1):705-709(EI:20112614108473)

58.通讯作者, Deposition of VOX films by reactive sputtering and its properties, Electrochemical Society Transactions,2011,34(1):503~508(EI:20112614108440)

59.通讯作者, Effects of substrate temperature on resistive switching of TiOX thin film, Electrochemical Society Transactions,2011,34(1):571~576 (EI:20112614108452)

60.通讯作者, Effects of oxygen flow ratios and annealing on TiOx deposited by reactive magnetron sputtering, Electrochemical Society Transactions,2011,34(1):195-200(EI:20112614108394)

61.通讯作者 , Deposition of ZnO films by sputtering and its resistive switching properties, Electrochemical Society Transactions,2011,34(1):25-30 (EI:20112614108367)

62.通讯作者, Effect of O2/Ar ratio on Etching of Diamond Films by MPCVD, Electrochemical Society Transactions,2011,34(1):383-388 (EI:20112614108421)

63.通讯作者;Investigation on the Electric-Field-Induced Metal-Insulator Transition in VOx-Based Devices;Applied Mechanics and Materials,2012,(130 - 134):1-4(EI: 201147145324238)

 

国际会议

 

1.第一作者,Vanadium oxide for resistive random access memory application,International Conference on Optoelectronics and Microelectronics Technology and Application 2014,Nov. 2014(国际会议邀请报告

2.第一作者, Electrochemistry and CMP of Chalcogenide Phase Change Materials for Damascene Structure of CPCM,Proceedings of the 6th International Conference on Semiconductor Technology,(2007 SEMI-ECS ISTC) March 18~20, 2007, Shanghai, China,Editors: Ming Yang,PP264~270(国际会议邀请报告,EI:090511879678)

3.通讯作者,Gas Sensing Properties of Formaldehyde Sensor Based on Zn-, Cu-Doped NiO Thin Film,CSTIC 2014,Shanghai,March 2014 (国际会议邀请报告EI20143218017121)

4 .通讯作者,Effect of Annealing Temperature and Surface Adsorption Fe-,Pd- on SnO2 Gas Sensor,CSTIC 2014,Shanghai,March 2014 (国际会议邀请报告,EI20143218017126)

5.通讯作者,Simulation Study of dimensional effect on Bipolar Resistive Random Access Memory (RRAM),5th IEEE International NanoElectronics Conference, INEC 2013,Singapore, on 2nd- 4th January 2013,PP306-308(EI :20131116117521,口头报告

6.通讯作者,Microstructure and Piezoelectric Properties of c-BN Nano-films Deposited on Si by RF Sputtering for Piezoelectric Devices,5th IEEE International NanoElectronics Conference, INEC 2013,Singapore, on 2nd-4th January 2013,PP49-51(EI :20131116117440,口头报告

7.通讯作者, Effect of deposition temperature on I-V characteristics of vanadium oxide film,ASME 2012 International Mechanical Engineering Congress IMECE2012-87232, Nov. 09-15, 2012, Houston, Texas, USA(EI:20134616979148,口头报告

8.通讯作者 , Optical properties of nanostructure tungsten doped vanadium oxide,ASME 2012 International Mechanical Engineering Congress IMECE2012-87228,Nov. 09-15, 2012, Houston, Texas, USA(EI:20134616979210,口头报告

9.通讯作者 ,Simulation of hydrogen diffusion and adsorption on single-walled carbon nanotubes, ASME 2012 International Mechanical Engineering Congress IMECE2012-87222, Nov. 09-15, 2012, Houston, Texas, USA(EI:20134616979107,口头报告

10.通讯作者,Electrostatic capacitance extraction for carbon nanotube bundle interconnects,4th IEEE International NanoElectronics Conference, INEC 2011,June 21, 2011 - June 24, 2011,Tao-Yuan, Taiwan,Article number:5991636(EI :20113914360992,口头报告

11.通讯作者,Crosstalk analysis of carbon nanotube bundle interconnects,4th IEEE International NanoElectronics Conference, INEC 2011,June 21, 2011 - June 24, 2011,Tao-Yuan, Taiwan,Article number:5991635(EI :20113914360991,口头报告

12.第一作者, Study on Chemical Mechanical Polishing of GeSbTe for Chalcogenide Phase Change Memory,2006 8th International Conference on Solid-State and Integrated Circuit Technology,October 23-26, 2006, Shanghai, China,Editors: Ting-Ao Tang, Guo-Ping Ru, Yu-Long Jiang,PP821-823(EI:073110725366,口头报告

13.第一作者, Chemical Mechanical Polishing Slurry for Tungsten in ULSI with Large Particle Size Colloidal Silica Nano-Abrasive, 2005 ASME- Proceedings of the World Tribology Congress III, p 515-516, September 12-16, 2005, Washington, DC(EI:06099721537,口头报告

14.第一作者, CMP slurry for dielectric in ULSI with large particle colloidal nano-abrasive of silica sol, Proceedings of the 4th International Conference on Semiconductor Technology,(2005 SEMI-ECS ISTC)  March 15~17, 2005, Shanghai, China,Editors: Ming Yang,PP685~692(Oral, EI: 06169822749,口头报告

15.第一作者, Chemical mechanical polishing of Ge-Sb-Te thin film for chalcogenide phase change memory, Proceedings of the 4th International Conference on Semiconductor Technology,(2005 SEMI-ECS ISTC)  March 15~17, 2005, Shanghai, China,Editors: Ming Yang,PP630~638(Oral, EI: 06169822742,口头报告

专著:

1.刘玉岭,檀柏梅,张楷亮 编著,《微电子技术工程-材料、工艺与测试》,电子工业出版社,2004.10,北京

2.刘玉岭,檀柏梅,张楷亮 编著,《超大规模集成电路衬底材料性能及加工测试技术工程》,冶金工业出版社,2002.8,北京

专利:

1.第一发明人,高介电材料钛酸锶钡化学机械抛光用的纳米抛光液,中国发明专利,授权专利号ZL200410093370.0, 2006.12.20

2.第一发明人,硫系化合物相变材料化学机械抛光的纳米抛光液及其应用,中国发明专利,授权专利号ZL20041006674.8,2007.2.14

3.第一发明人,硫系相变材料化学机械抛光的无磨料抛光液及其应用, 中国发明专利,授权专利号ZL200410084490.4,2007.9.5

4.第一发明人,集成电路铜互连一步化学机械抛光工艺及相应纳米抛光液,中国发明专利,授权专利号ZL200510026996.4,2010.8.18

5.第一发明人,一种采用复合工艺进行金刚石薄膜平坦化的方法,中国发明专利,授权专利号ZL201010273591.1,2012.12.12

6.第一发明人,一种具有低挥发性的太阳电池单晶硅制绒液及应用,中国发明专利,授权专利号ZL201110321054.4,2013.3.6

7.第一发明人,一种基于金刚石薄膜的LED散热基底及其制作方法,中国发明专利,授权专利号ZL201010593297.9, 2013.3.6

8.第一发明人,一种用于集成电路芯片的复合通孔互连结构,中国发明专利,授权专利号ZL201010593270.X,2013.3.13

9.第一发明人,一种高致密纳米金刚石薄膜的生长方法,中国发明专利,授权专利号ZL201110119079.6,2013.4.17

10.第一发明人,基于P/N型氧化物叠层结构的阻变存储器及其制备方法,中国发明专利,授权专利号ZL201010593332.7, 2013.7.10

11.第一发明人,一种磨料经过表面活性剂处理的水基切削液及其制备方法,中国发明专利,授权专利号ZL201110119091.7,2013.10.23

12.第一发明人,一种用于氧化钒化学机械抛光的纳米抛光液及其应用,中国发明专利,授权专利号ZL201010593331.2,2013.10.23

13.第一发明人,一种用于硫系相变材料的化学机械抛光方法及抛光液,中国发明专利,授权专利号ZL201110320251.4, 2014.3.19

14.第一发明人,基于氧化钒/氧化锌叠层结构的阻变存储器及其制备方法,中国发明专利,授权专利号ZL201210440132.7, 2014.9.10

15.第一发明人,一种化学机械抛光用纳米抛光液,中国发明专利授权专利号 ZL201310105238.6,授权日:2014.10.15

16.第二发明人,大粒径硅溶胶的制备方法,中国发明专利,授权专利号ZL 200410019069.5,2007.3.14

17.第二发明人,超大规模集成电路多层铜布线中铜与钽的化学机械全局平面化抛光液,中国发明专利,授权专利号ZL02116761.3,2004.2.4

18.第二发明人,一种蓝宝石衬底化学机械抛光浆液,中国发明专利,授权专利号ZL200710037163.7,2009.04.15

19.第二发明人,一种纤芯失配的光纤二氧化氮气体浓度测量仪,中国发明专利,授权专利号ZL200910228960.2, 2011.6.22

(2017年9月更新)

 
 
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